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| SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features * * * * * * * * Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 25A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application High Temperature Soldering: 260C/10 Second at Terminal Plastic Material: UL Flammability Classification Rating 94V-0 NEW PRODUCT A B A D C Mechanical Data * * * * * * Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.3 grams (approx.) Mounting Position: Any Marking: Type Number Dim A B C D DO-41 Min 25.4 4.1 0.71 2.0 Max 3/4 5.2 0.86 2.7 All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 85C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage @ IF = 1.0A Peak Reverse Current at Rated DC Blocking Voltage Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Lead Typical Thermal Resistance Junction to Ambient (Note 1) Operating and Storage Temperature Range Notes: @ TA = 25C @ TA = 25C @ TA = 100C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM Cj RqJL RqJA Tj, TSTG @ TA = 25C unless otherwise specified SB170 70 49 SB180 80 56 1.0 25 0.80 0.5 10 80 15 50 SB190 90 63 SB1100 100 70 Unit V V A A V mA pF K/W K/W C -65 to +125 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30116 Rev. B-1 1 of 2 SB170 - SB1100 IF, INSTANTANEOUS FORWARD CURRENT (A) 20 10 NEW PRODUCT I(O), AVERAGE FORWARD CURRENT (A) 1.0 0.5 1.0 Tj = 25C IF Pulse Width = 300s 0 25 50 75 100 125 150 TL, LEAD TEMPERATURE (C) Fig. 1 Forward Current Derating Curve 0.1 0.1 0.5 0.9 1.3 1.7 2.1 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics IFSM, PEAK FORWARD SURGE CURRENT (A) 40 Single Half Sine-Wave (JEDEC Method) Tj = 150C 1000 30 Cj, JUNCTION CAPACITANCE (pF) Tj = 25C f = 1.0MHz 20 100 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance DS30116 Rev. B-1 2 of 2 SB170 - SB1100 |
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